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High optical gain in InP-based quantum-dot material monolithically grown on silicon emitting at telecom wavelengths

dc.date.accessioned2022-07-11T13:07:11Z
dc.date.available2022-07-11T13:07:11Z
dc.date.issued2022-04-01
dc.identifierdoi:10.17170/kobra-202205056136
dc.identifier.urihttp://hdl.handle.net/123456789/13989
dc.description.sponsorshipGefördert im Rahmen eines Open-Access-Transformationsvertrags mit dem Verlagger
dc.language.isoengeng
dc.rightsNamensnennung 4.0 International*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/*
dc.subjectInP based QD laser on Sieng
dc.subjectdislocation filtering layerseng
dc.subjectGaAs on Sieng
dc.subjectInAs on Sieng
dc.subjectInAs QD SOAeng
dc.subject.ddc530
dc.subject.ddc600
dc.titleHigh optical gain in InP-based quantum-dot material monolithically grown on silicon emitting at telecom wavelengthseng
dc.typeAufsatz
dcterms.abstractWe describe the fabrication process and properties of an InP based quantum dot (QD) laser structure grown on a 5° off-cut silicon substrate. Several layers of QD-based dislocation filters embedded in GaAs and InP were used to minimize the defect density in the QD active region which comprised eight emitting dot layers. The structure was analyzed using high resolution transmission electron microscopy, atomic force microscopy and photoluminescence. The epitaxial stack was used to fabricate optical amplifiers which exhibit electroluminescence spectra that are typical of conventional InAs QD amplifiers grown on InP substrates. The amplifiers avail up to 20 dB of optical gain, which is equivalent to a modal gain of 46 cm−¹.eng
dcterms.accessRightsopen access
dcterms.creatorBalasubramanian, Ramasubramanian
dcterms.creatorSichkovskyi, Vitalii
dcterms.creatorCorley-Wiciak, Cedric
dcterms.creatorSchnabel, Florian
dcterms.creatorPopilevsky, Larisa
dcterms.creatorAtiya, Galit
dcterms.creatorKhanonkin, Igor
dcterms.creatorWillinger, Amnon J.
dcterms.creatorEyal, Ori
dcterms.creatorEisenstein, Gadi
dcterms.creatorReithmaier, Johann Peter
dc.relation.doidoi:10.1088/1361-6641/ac5d10
dc.subject.swdIndiumphosphidger
dc.subject.swdQuantenpunktger
dc.subject.swdLaserger
dc.subject.swdGalliumarsenidger
dc.subject.swdSiliciumger
dc.subject.swdIndiumarsenidger
dc.type.versionpublishedVersion
dcterms.source.identifiereissn:1361-6641
dcterms.source.issueNumber 5
dcterms.source.journalSemiconductor Science and Technologyeng
dcterms.source.volumeVolume 37
kup.iskupfalse
dcterms.source.articlenumber055005


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