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Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs
(Optical Society of America, 2014)
We investigate the effect of the epitaxial structure and the acceptor doping profile on the efficiency droop in InGaN/GaN LEDs by the physics based simulation of experimental internal quantum efficiency (IQE) characteristics. The device geometry is an integral part of our simulation approach. We demonstrate that even for single quantum well LEDs the droop depends critically on the acceptor doping profile. The Auger recombination was found to increase stronger than with the third power of the carrier density and has ...
Gone with the internet - How the old education was lost
Despite its young history, Computer Science Education has seen a number of "revolutions". Being a veteran in the field, the author reflects on the many changes he has seen in computing and its teaching. The intent of this personal collection is to point out that most revolutions came unforeseen and that many of the new learning initiatives, despite high financial input, ultimately failed. The author then considers the current revolution (MOOC, inverted lectures, peer instruction, game design) and, based on the ...
Review of Flux Interaction of Differently Aligned Magnetic Fields in Inductors and Transformers
Magnetic devices are used in the majority of power electronic applications, e.g. power electronic converters, mains filters or burst/surge protection. Typically, they are the bulkiest and most cost-intensive components. Flux interaction of differently aligned magnetic fields in inductors and transformers can be one opportunity for size and cost reduction. It enables controllable magnetic devices through an additional manipulated variable to improve application design. The presented article gives an overview about ...