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Dissertation
1.55 µm High-Speed QDs Lasers for Optical Telecommunication Applications
(2014-12-19)
In this work investigation of the QDs formation and the fabrication of QD based semiconductor lasers for telecom applications are presented. InAs QDs grown on AlGaInAs lattice matched to InP substrates are used to fabricate lasers operating at 1.55 µm, which is the central wavelength for far distance data transmission. This wavelength is used due to its minimum attenuation in standard glass fibers.
The incorporation of QDs in this material system is more complicated in comparison to InAs QDs in the GaAs system. Due ...