High gain 1.55 μm diode lasers based on InAs quantum dot like active regions

dc.date.accessioned	2013-10-30T11:42:33Z
dc.date.available	2013-10-30T11:42:33Z
dc.date.issued	2011
dc.identifier.issn	1077-3118
dc.identifier.other	zdb:ZDB-1-AIPK
dc.identifier.uri	urn:nbn:de:hebis:34-2013103044333
dc.identifier.uri	http://hdl.handle.net/123456789/2013103044333
dc.rights	Urheberrechtlich geschützt
dc.rights.uri	https://rightsstatements.org/page/InC/1.0/
dc.subject.ddc	530
dc.title	High gain 1.55 μm diode lasers based on InAs quantum dot like active regions	eng
dc.type	Aufsatz
dcterms.accessRights	open access
dcterms.bibliographicCitation	In: Applied physics letters. - Melville, NY : American Inst. of Physics, 2011, Vol. 98, 201102, 1-3
dcterms.creator	Gilfert, C.
dcterms.creator	Ivanov, V.
dcterms.creator	Oehl, N.
dcterms.creator	Yacob, M.
dcterms.creator	Reithmaier, J. P.
dc.description.everything	Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich. - This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively.	ger
dc.relation.doi	doi:10.1063/1.3590727