Aufsatz
Bright light emissions with narrow spectral linewidths from single InAs/GaAs quantum dots directly grown on silicon substrates
Citation
@article{urn:nbn:de:hebis:34-2013103044340,
author={Benyoucef, M. and Usman, M. and Reithmaier, J. P.},
title={Bright light emissions with narrow spectral linewidths from single InAs/GaAs quantum dots directly grown on silicon substrates},
year={2013}
}
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<resource xsi:schemaLocation="http://datacite.org/schema/kernel-2.2 http://schema.datacite.org/meta/kernel-2.2/metadata.xsd"> 2013-10-30T12:52:53Z 2013-10-30T12:52:53Z 2013 1077-3118 zdb:ZDB-1-AIPK urn:nbn:de:hebis:34-2013103044340 http://hdl.handle.net/123456789/2013103044340 eng Urheberrechtlich geschützt https://rightsstatements.org/page/InC/1.0/ 530 Bright light emissions with narrow spectral linewidths from single InAs/GaAs quantum dots directly grown on silicon substrates Aufsatz open access In: Applied physics letters. - Melville, NY : American Inst. of Physics, 2013, Vol. 102, 132101, 1-4 Benyoucef, M. Usman, M. Reithmaier, J. P. Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich. - This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively. doi:10.1063/1.4799149 </resource>
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