Revealing the origin of magnetoresistance in unipolar amorphous organic field-effect transistors
dc.date.accessioned | 2014-12-15T14:03:27Z | |
dc.date.available | 2014-12-15T14:03:27Z | |
dc.date.issued | 2014 | |
dc.identifier.issn | 2050-7534 | |
dc.identifier.other | zdb:ZDB-1-RSCK | |
dc.identifier.uri | urn:nbn:de:hebis:34-2014121546704 | |
dc.identifier.uri | http://hdl.handle.net/123456789/2014121546704 | |
dc.language.iso | eng | |
dc.rights | Urheberrechtlich geschützt | |
dc.rights.uri | https://rightsstatements.org/page/InC/1.0/ | |
dc.subject.ddc | 530 | |
dc.title | Revealing the origin of magnetoresistance in unipolar amorphous organic field-effect transistors | eng |
dc.type | Aufsatz | |
dcterms.accessRights | open access | |
dcterms.bibliographicCitation | In: Journal of materials chemistry. C, Materials for optical and electronic devices. - London : RSC, 2014, Vol. 2, 8569-8577 | |
dcterms.creator | Isenberg, Carolin | |
dcterms.creator | Saragi, Tobat P. I. | |
dc.relation.doi | doi:10.1039/C4TC00702F |
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