High gain 1.55 μm diode lasers based on InAs quantum dot like active regions
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@article{urn:nbn:de:hebis:34-2013103044333, author ={Gilfert, C. and Ivanov, V. and Oehl, N. and Yacob, M. and Reithmaier, J. P.}, title ={High gain 1.55 μm diode lasers based on InAs quantum dot like active regions}, copyright ={https://rightsstatements.org/page/InC/1.0/}, year ={2011} }