High gain 1.55 μm diode lasers based on InAs quantum dot like active regions

Collections
@article{urn:nbn:de:hebis:34-2013103044333,
  author    ={Gilfert, C. and Ivanov, V. and Oehl, N. and Yacob, M. and Reithmaier, J. P.},
  title    ={High gain 1.55 μm diode lasers based on InAs quantum dot like active regions},
  copyright  ={https://rightsstatements.org/page/InC/1.0/},
  year   ={2011}
}