High gain 1.55 μm diode lasers based on InAs quantum dot like active regions

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dc.date.accessioned2013-10-30T11:42:33Z
dc.date.available2013-10-30T11:42:33Z
dc.date.issued2011
dc.description.everythingDieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich. - This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively.ger
dc.identifier.issn1077-3118
dc.identifier.otherzdb:ZDB-1-AIPK
dc.identifier.uriurn:nbn:de:hebis:34-2013103044333
dc.identifier.urihttp://hdl.handle.net/123456789/2013103044333
dc.relation.doidoi:10.1063/1.3590727
dc.rightsUrheberrechtlich geschützt
dc.rights.urihttps://rightsstatements.org/page/InC/1.0/
dc.subject.ddc530
dc.titleHigh gain 1.55 μm diode lasers based on InAs quantum dot like active regionseng
dc.typeAufsatz
dcterms.accessRightsopen access
dcterms.bibliographicCitationIn: Applied physics letters. - Melville, NY : American Inst. of Physics, 2011, Vol. 98, 201102, 1-3
dcterms.creatorGilfert, C.
dcterms.creatorIvanov, V.
dcterms.creatorOehl, N.
dcterms.creatorYacob, M.
dcterms.creatorReithmaier, J. P.

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