High optical gain in InP-based quantum-dot material monolithically grown on silicon emitting at telecom wavelengths
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In: Semiconductor Science and Technology Volume 37 / Number 5 (2022-04-01) , S. ; eissn:1361-6641
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We describe the fabrication process and properties of an InP based quantum dot (QD) laser structure grown on a 5° off-cut silicon substrate. Several layers of QD-based dislocation filters embedded in GaAs and InP were used to minimize the defect density in the QD active region which comprised eight emitting dot layers. The structure was analyzed using high resolution transmission electron microscopy, atomic force microscopy and photoluminescence. The epitaxial stack was used to fabricate optical amplifiers which exhibit electroluminescence spectra that are typical of conventional InAs QD amplifiers grown on InP substrates. The amplifiers avail up to 20 dB of optical gain, which is equivalent to a modal gain of 46 cm−¹.
@article{doi:10.17170/kobra-202205056136,
author ={Balasubramanian, Ramasubramanian and Sichkovskyi, Vitalii and Corley-Wiciak, Cedric and Schnabel, Florian and Popilevsky, Larisa and Atiya, Galit and Khanonkin, Igor and Willinger, Amnon J. and Eyal, Ori and Eisenstein, Gadi and Reithmaier, Johann Peter},
title ={High optical gain in InP-based quantum-dot material monolithically grown on silicon emitting at telecom wavelengths},
keywords ={530 and 600 and Indiumphosphid and Quantenpunkt and Laser and Galliumarsenid and Silicium and Indiumarsenid},
copyright ={http://creativecommons.org/licenses/by/4.0/},
language ={en},
journal ={Semiconductor Science and Technology},
year ={2022-04-01}
}