Mode properties of telecom wavelength InP-based high-(Q/V) L4/3 photonic crystal cavities
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In: Nanotechnology Volume 31 / Number 31 (2020-05-13) , S. ; EISSN 1361-6528
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We present finite-difference time domain simulations and optical characterizations via micro-photoluminescence measurements of InP-based L4/3 photonic crystal cavities with embedded quantum dots (QDs) and designed for the M1 ground mode to be emitting at telecom C-band wavelengths. The simulated M1 Q-factor values exceed 106, while the M1 mode volume is found to be 0.33 × (λ/n)3, which is less than half the value of the M1 mode volume of a comparable L3 cavity. Low-temperature micro-photoluminescence measurements revealed experimental M1 Q-factor values on the order of 104 with emission wavelengths around 1.55 μm. Weak coupling behavior of the QD exciton line and the M1 ground mode was achieved via temperature-tuning experiments.
@article{doi:10.17170/kobra-202007161448, author ={Rickert, Lucas and Fritsch, Bert and Kors, Andrei and Reithmaier, Johann Peter and Benyoucef, Mohamed}, title ={Mode properties of telecom wavelength InP-based high-(Q/V) L4/3 photonic crystal cavities}, keywords ={530 and Photonischer Kristall and Wellenlänge and Quantenpunkt and Spektroskopie}, copyright ={http://creativecommons.org/licenses/by/4.0/}, language ={en}, journal ={Nanotechnology}, year ={2020-05-13} }