Bright light emissions with narrow spectral linewidths from single InAs/GaAs quantum dots directly grown on silicon substrates
dc.date.accessioned | 2013-10-30T12:52:53Z | |
dc.date.available | 2013-10-30T12:52:53Z | |
dc.date.issued | 2013 | |
dc.description.everything | Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich. - This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively. | ger |
dc.identifier.issn | 1077-3118 | |
dc.identifier.other | zdb:ZDB-1-AIPK | |
dc.identifier.uri | urn:nbn:de:hebis:34-2013103044340 | |
dc.identifier.uri | http://hdl.handle.net/123456789/2013103044340 | |
dc.language.iso | eng | |
dc.relation.doi | doi:10.1063/1.4799149 | |
dc.rights | Urheberrechtlich geschützt | |
dc.rights.uri | https://rightsstatements.org/page/InC/1.0/ | |
dc.subject.ddc | 530 | |
dc.title | Bright light emissions with narrow spectral linewidths from single InAs/GaAs quantum dots directly grown on silicon substrates | eng |
dc.type | Aufsatz | |
dcterms.accessRights | open access | |
dcterms.bibliographicCitation | In: Applied physics letters. - Melville, NY : American Inst. of Physics, 2013, Vol. 102, 132101, 1-4 | |
dcterms.creator | Benyoucef, M. | |
dcterms.creator | Usman, M. | |
dcterms.creator | Reithmaier, J. P. |