Micromagnetic Simulations of Submicron Vortex Structures for the Detection of Superparamagnetic Labels

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dc.date.accessioned2020-11-16T12:45:43Z
dc.date.available2020-11-16T12:45:43Z
dc.date.issued2020-10-15
dc.description.sponsorshipGefördert durch den Publikationsfonds der Universität Kassel
dc.identifierdoi:10.17170/kobra-202011162175
dc.identifier.urihttp://hdl.handle.net/123456789/11982
dc.language.isoengeng
dc.relation.doidoi:10.3390/s20205819
dc.rightsNamensnennung 4.0 International*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/*
dc.subjectmicromagnetic simulationseng
dc.subjectsuperparamagnetic labelseng
dc.subjectvortex structureseng
dc.subjectgiant magnetoresistanceeng
dc.subjectlab-on-a-chip deviceeng
dc.subject.ddc550
dc.subject.ddc600
dc.subject.swdMikrosystemtechnikger
dc.subject.swdMikromagnetismusger
dc.subject.swdParamagnetismusger
dc.subject.swdSimulationger
dc.subject.swdLab on a Chipger
dc.titleMicromagnetic Simulations of Submicron Vortex Structures for the Detection of Superparamagnetic Labelseng
dc.typeAufsatz
dc.type.versionpublishedVersion
dcterms.abstractWe present a numerical investigation on the detection of superparamagnetic labels using a giant magnetoresistance (GMR) vortex structure. For this purpose, the Landau–Lifshitz–Gilbert equation was solved numerically applying an external z-field for the activation of the superparamagnetic label. Initially, the free layer’s magnetization change due to the stray field of the label is simulated. The electric response of the GMR sensor is calculated by applying a self-consistent spin-diffusion model to the precomputed magnetization configurations. It is shown that the soft-magnetic free layer reacts on the stray field of the label by shifting the magnetic vortex orthogonally to the shift direction of the label. As a consequence, the electric potential of the GMR sensor changes significantly for label shifts parallel or antiparallel to the pinning of the fixed layer. Depending on the label size and its distance to the sensor, the GMR sensor responds, changing the electric potential from 26.6 mV to 28.3 mV.ger
dcterms.accessRightsopen accessger
dcterms.creatorWetterau, Lukas
dcterms.creatorAbert, Claas
dcterms.creatorSuess, Dieter
dcterms.creatorAlbrecht, Manfred
dcterms.creatorWitzigmann, Bernd
dcterms.source.articlenumber5819
dcterms.source.identifierEISSN 1424-8220
dcterms.source.issueIssue 20
dcterms.source.journalsensorseng
dcterms.source.volumeVolume 20
kup.iskupfalse

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