Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy

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dc.date.accessioned2022-01-05T14:17:43Z
dc.date.available2022-01-05T14:17:43Z
dc.date.issued2021-10-21
dc.description.sponsorshipGefördert durch den Publikationsfonds der Universität Kasselger
dc.identifierdoi:10.17170/kobra-202112235347
dc.identifier.urihttp://hdl.handle.net/123456789/13488
dc.language.isoengeng
dc.relation.doidoi:10.3390/ma14216270
dc.rightsNamensnennung 4.0 International*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/*
dc.subjectMBE growtheng
dc.subjectsymmetric InAs/InP quantum dotseng
dc.subject3rd telecom windoweng
dc.subjectinternal quantum efficiencyeng
dc.subjectcarrier dynamicseng
dc.subjectthermal stability of emissioneng
dc.subjecttime-correlated single-photon countingeng
dc.subject.ddc600
dc.subject.swdQuantenpunktger
dc.subject.swdMolekularstrahlepitaxieger
dc.subject.swdTelekommunikationger
dc.subject.swdQuantenausbeuteger
dc.subject.swdCarrierger
dc.subject.swdTemperaturbeständigkeitger
dc.titleOptical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxyeng
dc.typeAufsatz
dc.type.versionpublishedVersion
dcterms.abstractWe present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecular beam epitaxy. This leads to their unique properties, i.e., low spatial density and in-plane shape symmetry. These are advantageous for non-classical light generation for quantum technologies applications. As a measure of the internal quantum efficiency, the discrepancy between calculated and experimentally determined photon extraction efficiency is used. The investigated nanostructures exhibit close to ideal emission efficiency proving their high structural quality. The thermal stability of emission is investigated by means of microphotoluminescence. This allows to determine the maximal operation temperature of the device and reveal the main emission quenching channels. Emission quenching is predominantly caused by the transition of holes and electrons to higher QD’s levels. Additionally, these carriers could further leave the confinement potential via the dense ladder of QD states. Single QD emission is observed up to temperatures of about 100 K, comparable to the best results obtained for epitaxial QDs in this spectral range. The fundamental limit for the emission rate is the excitation radiative lifetime, which spreads from below 0.5 to almost 1.9 ns (GHz operation) without any clear spectral dispersion. Furthermore, carrier dynamics is also determined using time-correlated single-photon counting.eng
dcterms.accessRightsopen access
dcterms.creatorSmołka, Tristan
dcterms.creatorPosmyk, Katarzyna
dcterms.creatorWasiluk, Maja
dcterms.creatorWyborski, Paweł
dcterms.creatorGawełczyk, Michał
dcterms.creatorMrowiński, Paweł
dcterms.creatorMikulicz, Monika
dcterms.creatorZielińska, Agata
dcterms.creatorReithmaier, Johann Peter
dcterms.creatorMusiał, Anna
dcterms.creatorBenyoucef, Mohamed
dcterms.source.articlenumber6270
dcterms.source.identifiereissn:1996-1944
dcterms.source.issueIssue 21
dcterms.source.journalMaterialseng
dcterms.source.volumeVolume 14
kup.iskupfalse

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