Influence of the interaction potential on simulated sputtering and reflection data
| dc.date.accessioned | 2008-08-12T09:09:10Z | |
| dc.date.available | 2008-08-12T09:09:10Z | |
| dc.date.issued | 1992 | |
| dc.format.extent | 500960 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.issn | 0178-7683 | |
| dc.identifier.issn | 0722-3277 | |
| dc.identifier.uri | urn:nbn:de:hebis:34-2008081223210 | |
| dc.identifier.uri | http://hdl.handle.net/123456789/2008081223210 | |
| dc.language.iso | eng | |
| dc.rights | Urheberrechtlich geschützt | |
| dc.rights.uri | https://rightsstatements.org/page/InC/1.0/ | |
| dc.subject.ddc | 530 | |
| dc.subject.pacs | 79.20. | eng |
| dc.subject.pacs | 34.20. | eng |
| dc.title | Influence of the interaction potential on simulated sputtering and reflection data | eng |
| dc.type | Aufsatz | |
| dcterms.abstract | The TRIM.SP program which is based on the binary collision approximation was changed to handle not only repulsive interaction potentials, but also potentials with an attractive part. Sputtering yields, average depth and reflection coefficients calculated with four different potentials are compared. Three purely repulsive potentials (Meliere, Kr-C and ZBL) are used and an ab initio pair potential, which is especially calculated for silicon bombardment by silicon. The general trends in the calculated results are similar for all potentials applied, but differences between the repulsive potentials and the ab initio potential occur for the reflection coefficients and the sputtering yield at large angles of incidence. | eng |
| dcterms.accessRights | open access | |
| dcterms.bibliographicCitation | In: Zeitschrift für Physik / D, Atoms, molecules and clusters. Berlin [u.a.] : Springer, 24.1992, S. 171-176 | |
| dcterms.creator | Eckstein, Wolfgang | |
| dcterms.creator | Hackel, Siegfried | |
| dcterms.creator | Heinemann, Dirk | |
| dcterms.creator | Fricke, Burkhard |