Calculation of optical gain in AlGaN quantum wells for ultraviolet emission
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In: AIP Advances Volume 10 / Issue 9 (2020-09-03) , S. 95307; EISSN 2158-3226
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Stimulated emission from AlGaN based quantum wells (QWs) emitting at ultraviolet wavelengths is investigated theoretically. Maxwell–Bloch equations in the second Born approximation are solved self-consistently with the Poisson equation. The valence band dispersion is obtained from a 6-band kp-model. For a QW emitting at around 270 nm with a thickness of 2.2 nm, an estimated FWHM of 10 meV for homogeneous broadening and an excitonic red shift of 100 meV are extracted under typical laser conditions. From a comparison to experimental data of stimulated emission, an inhomogeneous broadening energy of 39 meV FWHM is evaluated. Calculations show that high TE gain can be achieved for thin QWs around 2 nm thickness in a multiple QW arrangement or for single QWs thicker than 6 nm.
@article{doi:10.17170/kobra-202010011870, author ={Witzigmann, Bernd and Römer, Friedhard and Martens, Martin and Kuhn, Christian and Wernicke, Tim and Kneissl, Michael}, title ={Calculation of optical gain in AlGaN quantum wells for ultraviolet emission}, keywords ={530 and 600 and Quantenwell and Übergitter and Partielle Differentialgleichung and Bandstruktur and Halbleiter and Born-Näherung and Maxwell-Bloch-Gleichungen}, copyright ={http://creativecommons.org/licenses/by/4.0/}, language ={en}, journal ={AIP Advances}, year ={2020-09-03} }