2016-03-162016-03-162016-03-16urn:nbn:de:hebis:34-2016031650027http://hdl.handle.net/123456789/2016031650027engUrheberrechtlich geschützthttps://rightsstatements.org/page/InC/1.0/Computer simulationLaser melting of siliconMolecular dynamicsDiffusion equationSemiconductorsTwo-temperature model530Atomistic-continuum modeling of ultrafast laser-induced melting of silicon targetsDissertation02.60.Cb Numerical simulation; solution of equations02.70.Bf Finite-difference methods02.70.Ns Molecular dynamics and particle methods07.05.Tp Computer modeling and simulation64.60.A- Specific approaches applied to studies of phase transitions64.60.Q- Nucleation64.70.kg Semiconductors65.40.De Thermal expansion; thermomechanical effects68.08.De Liquid-solid interface structure: measurements and simulations68.60.Dv Thermal stability; thermal effects71.10.Ay Fermi-liquid theory and other phenomenological models71.35.Ee Electron-hole drops and electron-hole plasmaComputersimulationLaserSiliciumSchmelzen