Datum
2020-06-30Autor
Finke, TanjaNürnberg, JacobSichkovskyi, VitaliiGolling, Matthias ChristophKeller, UrsulaReithmaier, Johann PeterMetadata
Zur Langanzeige
Aufsatz
Temperature resistant fast InxGa1−xAs / GaAs quantum dot saturable absorber for the epitaxial integration into semiconductor surface emitting lasers
Zusammenfassung
Quantum-dot-based semiconductor saturable absorber mirrors (SESAMs) with fast response times were developed by molecular beam epitaxy (MBE). Using quantum dots (QDs) in the absorber region of the SESAMs instead of quantum wells, enables additional degrees of freedom in the design, the control of saturation parameters and the recovery dynamics. However, if one wants to integrate such a SESAM element into semiconductor surface emitting lasers such as a mode-locked integrated external-cavity surface-emitting laser (MIXSEL), the saturable absorber layers have to withstand a longer high-temperature growth procedure for the epitaxial formation of distributed Bragg reflectors (DBR). Typically defect related SESAMs will be annealed at those growth temperatures and lose their high-speed performance. Here we present a systematic study on the growth parameters and post-growth annealing of SESAMs based on high-quality InxGa1−xAs/GaAs quantum dots (QDs) grown by MBE at growth temperatures of 450 °C or higher. The good quality enables the QDs to survive the long DBR overgrowth at 600 °C with only minimal shifts in the designed operation wavelength of 1030 nm required for growth of MIXSEL devices. The introduction of recombination centers with p-type modulation doping and additional post-growth annealing improves the absorption of the high-quality QDs. Hence, low saturation fluences < 10 µJ/cm2 and a reduction of the τ1/e recovery time to values < 2 ps can be achieved.
Zitierform
In: Optics express Volume 28 / Issue 14 (2020-06-30) , S. 20954-20966 ; EISSN 1094-4087Förderhinweis
Gefördert durch den Publikationsfonds der Universität KasselZitieren
@article{doi:10.17170/kobra-202008071543,
author={Finke, Tanja and Nürnberg, Jacob and Sichkovskyi, Vitalii and Golling, Matthias Christoph and Keller, Ursula and Reithmaier, Johann Peter},
title={Temperature resistant fast InxGa1−xAs / GaAs quantum dot saturable absorber for the epitaxial integration into semiconductor surface emitting lasers},
journal={Optics express},
year={2020}
}
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2020-08-11T12:23:42Z 2020-08-11T12:23:42Z 2020-06-30 doi:10.17170/kobra-202008071543 http://hdl.handle.net/123456789/11678 Gefördert durch den Publikationsfonds der Universität Kassel eng Urheberrechtlich geschützt https://rightsstatements.org/page/InC/1.0/ 530 Temperature resistant fast InxGa1−xAs / GaAs quantum dot saturable absorber for the epitaxial integration into semiconductor surface emitting lasers Aufsatz Quantum-dot-based semiconductor saturable absorber mirrors (SESAMs) with fast response times were developed by molecular beam epitaxy (MBE). Using quantum dots (QDs) in the absorber region of the SESAMs instead of quantum wells, enables additional degrees of freedom in the design, the control of saturation parameters and the recovery dynamics. However, if one wants to integrate such a SESAM element into semiconductor surface emitting lasers such as a mode-locked integrated external-cavity surface-emitting laser (MIXSEL), the saturable absorber layers have to withstand a longer high-temperature growth procedure for the epitaxial formation of distributed Bragg reflectors (DBR). Typically defect related SESAMs will be annealed at those growth temperatures and lose their high-speed performance. Here we present a systematic study on the growth parameters and post-growth annealing of SESAMs based on high-quality InxGa1−xAs/GaAs quantum dots (QDs) grown by MBE at growth temperatures of 450 °C or higher. The good quality enables the QDs to survive the long DBR overgrowth at 600 °C with only minimal shifts in the designed operation wavelength of 1030 nm required for growth of MIXSEL devices. The introduction of recombination centers with p-type modulation doping and additional post-growth annealing improves the absorption of the high-quality QDs. Hence, low saturation fluences < 10 µJ/cm2 and a reduction of the τ1/e recovery time to values < 2 ps can be achieved. open access Finke, Tanja Nürnberg, Jacob Sichkovskyi, Vitalii Golling, Matthias Christoph Keller, Ursula Reithmaier, Johann Peter doi:10.1364/OE.396198 Quantenpunkt Sättigbare Absorption Molekularstrahlepitaxie publishedVersion EISSN 1094-4087 Issue 14 Optics express 20954-20966 Volume 28 false
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