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2020-09-03Subject
530 Physics 600 Technology QuantenwellÜbergitterPartielle DifferentialgleichungBandstrukturHalbleiterBorn-NäherungMaxwell-Bloch-GleichungenMetadata
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Aufsatz
Calculation of optical gain in AlGaN quantum wells for ultraviolet emission
Abstract
Stimulated emission from AlGaN based quantum wells (QWs) emitting at ultraviolet wavelengths is investigated theoretically. Maxwell–Bloch equations in the second Born approximation are solved self-consistently with the Poisson equation. The valence band dispersion is obtained from a 6-band kp-model. For a QW emitting at around 270 nm with a thickness of 2.2 nm, an estimated FWHM of 10 meV for homogeneous broadening and an excitonic red shift of 100 meV are extracted under typical laser conditions. From a comparison to experimental data of stimulated emission, an inhomogeneous broadening energy of 39 meV FWHM is evaluated. Calculations show that high TE gain can be achieved for thin QWs around 2 nm thickness in a multiple QW arrangement or for single QWs thicker than 6 nm.
Citation
In: AIP Advances Volume 10 / Issue 9 (2020-09-03) , S. 95307 ; EISSN 2158-3226Sponsorship
Gefördert durch den Publikationsfonds der Universität KasselCitation
@article{doi:10.17170/kobra-202010011870,
author={Witzigmann, Bernd and Römer, Friedhard and Martens, Martin and Kuhn, Christian and Wernicke, Tim and Kneissl, Michael},
title={Calculation of optical gain in AlGaN quantum wells for ultraviolet emission},
journal={AIP Advances},
year={2020}
}
0500 Oax 0501 Text $btxt$2rdacontent 0502 Computermedien $bc$2rdacarrier 1100 2020$n2020 1500 1/eng 2050 ##0##http://hdl.handle.net/123456789/11847 3000 Witzigmann, Bernd 3010 Römer, Friedhard 3010 Martens, Martin 3010 Kuhn, Christian 3010 Wernicke, Tim 3010 Kneissl, Michael 4000 Calculation of optical gain in AlGaN quantum wells for ultraviolet emission / Witzigmann, Bernd 4030 4060 Online-Ressource 4085 ##0##=u http://nbn-resolving.de/http://hdl.handle.net/123456789/11847=x R 4204 \$dAufsatz 4170 5550 {{Quantenwell}} 5550 {{Übergitter}} 5550 {{Partielle Differentialgleichung}} 5550 {{Bandstruktur}} 5550 {{Halbleiter}} 5550 {{Born-Näherung}} 5550 {{Maxwell-Bloch-Gleichungen}} 7136 ##0##http://hdl.handle.net/123456789/11847
2020-10-02T14:26:20Z 2020-10-02T14:26:20Z 2020-09-03 doi:10.17170/kobra-202010011870 http://hdl.handle.net/123456789/11847 Gefördert durch den Publikationsfonds der Universität Kassel eng Namensnennung 4.0 International http://creativecommons.org/licenses/by/4.0/ renormalization and regularization partial differential equations superlattices electronic bandstructure quantum wells semiconductors Born approximation laser theory Maxwell-Bloch equations 530 600 Calculation of optical gain in AlGaN quantum wells for ultraviolet emission Aufsatz Stimulated emission from AlGaN based quantum wells (QWs) emitting at ultraviolet wavelengths is investigated theoretically. Maxwell–Bloch equations in the second Born approximation are solved self-consistently with the Poisson equation. The valence band dispersion is obtained from a 6-band kp-model. For a QW emitting at around 270 nm with a thickness of 2.2 nm, an estimated FWHM of 10 meV for homogeneous broadening and an excitonic red shift of 100 meV are extracted under typical laser conditions. From a comparison to experimental data of stimulated emission, an inhomogeneous broadening energy of 39 meV FWHM is evaluated. Calculations show that high TE gain can be achieved for thin QWs around 2 nm thickness in a multiple QW arrangement or for single QWs thicker than 6 nm. open access Witzigmann, Bernd Römer, Friedhard Martens, Martin Kuhn, Christian Wernicke, Tim Kneissl, Michael doi:10.1063/5.0021890 Quantenwell Übergitter Partielle Differentialgleichung Bandstruktur Halbleiter Born-Näherung Maxwell-Bloch-Gleichungen publishedVersion EISSN 2158-3226 Issue 9 AIP Advances 95307 Volume 10 false
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