Date
2022-04-01Author
Balasubramanian, RamasubramanianSichkovskyi, VitaliiCorley-Wiciak, CedricSchnabel, FlorianPopilevsky, LarisaAtiya, GalitKhanonkin, IgorWillinger, Amnon J.Eyal, OriEisenstein, GadiReithmaier, Johann PeterSubject
530 Physics 600 Technology IndiumphosphidQuantenpunktLaserGalliumarsenidSiliciumIndiumarsenidMetadata
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Aufsatz
High optical gain in InP-based quantum-dot material monolithically grown on silicon emitting at telecom wavelengths
Abstract
We describe the fabrication process and properties of an InP based quantum dot (QD) laser structure grown on a 5° off-cut silicon substrate. Several layers of QD-based dislocation filters embedded in GaAs and InP were used to minimize the defect density in the QD active region which comprised eight emitting dot layers. The structure was analyzed using high resolution transmission electron microscopy, atomic force microscopy and photoluminescence. The epitaxial stack was used to fabricate optical amplifiers which exhibit electroluminescence spectra that are typical of conventional InAs QD amplifiers grown on InP substrates. The amplifiers avail up to 20 dB of optical gain, which is equivalent to a modal gain of 46 cm−¹.
Citation
In: Semiconductor Science and Technology Volume 37 / Number 5 (2022-04-01) eissn:1361-6641Sponsorship
Gefördert im Rahmen eines Open-Access-Transformationsvertrags mit dem VerlagCitation
@article{doi:10.17170/kobra-202205056136,
author={Balasubramanian, Ramasubramanian and Sichkovskyi, Vitalii and Corley-Wiciak, Cedric and Schnabel, Florian and Popilevsky, Larisa and Atiya, Galit and Khanonkin, Igor and Willinger, Amnon J. and Eyal, Ori and Eisenstein, Gadi and Reithmaier, Johann Peter},
title={High optical gain in InP-based quantum-dot material monolithically grown on silicon emitting at telecom wavelengths},
journal={Semiconductor Science and Technology},
year={2022}
}
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2022-07-11T13:07:11Z 2022-07-11T13:07:11Z 2022-04-01 doi:10.17170/kobra-202205056136 http://hdl.handle.net/123456789/13989 Gefördert im Rahmen eines Open-Access-Transformationsvertrags mit dem Verlag eng Namensnennung 4.0 International http://creativecommons.org/licenses/by/4.0/ InP based QD laser on Si dislocation filtering layers GaAs on Si InAs on Si InAs QD SOA 530 600 High optical gain in InP-based quantum-dot material monolithically grown on silicon emitting at telecom wavelengths Aufsatz We describe the fabrication process and properties of an InP based quantum dot (QD) laser structure grown on a 5° off-cut silicon substrate. Several layers of QD-based dislocation filters embedded in GaAs and InP were used to minimize the defect density in the QD active region which comprised eight emitting dot layers. The structure was analyzed using high resolution transmission electron microscopy, atomic force microscopy and photoluminescence. The epitaxial stack was used to fabricate optical amplifiers which exhibit electroluminescence spectra that are typical of conventional InAs QD amplifiers grown on InP substrates. The amplifiers avail up to 20 dB of optical gain, which is equivalent to a modal gain of 46 cm−¹. open access Balasubramanian, Ramasubramanian Sichkovskyi, Vitalii Corley-Wiciak, Cedric Schnabel, Florian Popilevsky, Larisa Atiya, Galit Khanonkin, Igor Willinger, Amnon J. Eyal, Ori Eisenstein, Gadi Reithmaier, Johann Peter doi:10.1088/1361-6641/ac5d10 Indiumphosphid Quantenpunkt Laser Galliumarsenid Silicium Indiumarsenid publishedVersion eissn:1361-6641 Number 5 Semiconductor Science and Technology Volume 37 false 055005
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