Aufsatz
Influence of the interaction potential on simulated sputtering and reflection data
Abstract
The TRIM.SP program which is based on the binary collision approximation was changed to handle not only repulsive interaction potentials, but also potentials with an attractive part. Sputtering yields, average depth and reflection coefficients calculated with four different potentials are compared. Three purely repulsive potentials (Meliere, Kr-C and ZBL) are used and an ab initio pair potential, which is especially calculated for silicon bombardment by silicon. The general trends in the calculated results are similar for all potentials applied, but differences between the repulsive potentials and the ab initio potential occur for the reflection coefficients and the sputtering yield at large angles of incidence.
Citation
In: Zeitschrift für Physik / D, Atoms, molecules and clusters. Berlin [u.a.] : Springer, 24.1992, S. 171-176Citation
@article{urn:nbn:de:hebis:34-2008081223210,
author={Eckstein, Wolfgang and Hackel, Siegfried and Heinemann, Dirk and Fricke, Burkhard},
title={Influence of the interaction potential on simulated sputtering and reflection data},
year={1992}
}
0500 Oax 0501 Text $btxt$2rdacontent 0502 Computermedien $bc$2rdacarrier 1100 1992$n1992 1500 1/eng 2050 ##0##urn:nbn:de:hebis:34-2008081223210 3000 Eckstein, Wolfgang 3010 Hackel, Siegfried 3010 Heinemann, Dirk 3010 Fricke, Burkhard 4000 Influence of the interaction potential on simulated sputtering and reflection data / Eckstein, Wolfgang 4030 4060 Online-Ressource 4085 ##0##=u http://nbn-resolving.de/urn:nbn:de:hebis:34-2008081223210=x R 4204 \$dAufsatz 4170 7136 ##0##urn:nbn:de:hebis:34-2008081223210
2008-08-12T09:09:10Z 2008-08-12T09:09:10Z 1992 0178-7683 0722-3277 urn:nbn:de:hebis:34-2008081223210 http://hdl.handle.net/123456789/2008081223210 500960 bytes application/pdf eng Urheberrechtlich geschützt https://rightsstatements.org/page/InC/1.0/ 530 Influence of the interaction potential on simulated sputtering and reflection data Aufsatz The TRIM.SP program which is based on the binary collision approximation was changed to handle not only repulsive interaction potentials, but also potentials with an attractive part. Sputtering yields, average depth and reflection coefficients calculated with four different potentials are compared. Three purely repulsive potentials (Meliere, Kr-C and ZBL) are used and an ab initio pair potential, which is especially calculated for silicon bombardment by silicon. The general trends in the calculated results are similar for all potentials applied, but differences between the repulsive potentials and the ab initio potential occur for the reflection coefficients and the sputtering yield at large angles of incidence. open access In: Zeitschrift für Physik / D, Atoms, molecules and clusters. Berlin [u.a.] : Springer, 24.1992, S. 171-176 Eckstein, Wolfgang Hackel, Siegfried Heinemann, Dirk Fricke, Burkhard 79.20. 34.20.
The following license files are associated with this item:
:Urheberrechtlich geschützt