Observation of two-electron-one-photon transitions in silicon

dc.date.accessioned	2008-09-10T12:32:58Z
dc.date.available	2008-09-10T12:32:58Z
dc.date.issued	1977
dc.identifier.issn	0031-9163
dc.identifier.issn	0375-9601
dc.identifier.uri	urn:nbn:de:hebis:34-2008091023566
dc.identifier.uri	http://hdl.handle.net/123456789/2008091023566
dc.format.extent	225583 bytes
dc.format.mimetype	application/pdf
dc.language.iso	eng
dc.rights	Urheberrechtlich geschützt
dc.rights.uri	https://rightsstatements.org/page/InC/1.0/
dc.subject.ddc	530
dc.title	Observation of two-electron-one-photon transitions in silicon	eng
dc.type	Aufsatz
dcterms.abstract	We report on the observation of K\alpha\alpha X-rays of Si, produced in collisions of 15-28 MeV Si projectiles with various target atoms in the range Z =6 to 29. Energy shifts of X-rays were measured and are compared with theoretical predictions. Cross section ratios for emission of K\alpha\alpha and K\alpha radiation are given.	eng
dcterms.accessRights	open access
dcterms.bibliographicCitation	In: Physics letters / A. - Amsterdam : North-Holland Publ., 60.1977, S. 106 - 108
dcterms.creator	Knaf, Bernhard Erich
dcterms.creator	Presser, G.
dcterms.creator	Stähler, Jochem
dcterms.creator	Fricke, Burkhard