Datum
2021-10-21Autor
Smołka, TristanPosmyk, KatarzynaWasiluk, MajaWyborski, PawełGawełczyk, MichałMrowiński, PawełMikulicz, MonikaZielińska, AgataReithmaier, Johann PeterMusiał, AnnaBenyoucef, MohamedSchlagwort
600 Technik QuantenpunktMolekularstrahlepitaxieTelekommunikationQuantenausbeuteCarrierTemperaturbeständigkeitMetadata
Zur Langanzeige
Aufsatz
Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy
Zusammenfassung
We present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecular beam epitaxy. This leads to their unique properties, i.e., low spatial density and in-plane shape symmetry. These are advantageous for non-classical light generation for quantum technologies applications. As a measure of the internal quantum efficiency, the discrepancy between calculated and experimentally determined photon extraction efficiency is used. The investigated nanostructures exhibit close to ideal emission efficiency proving their high structural quality. The thermal stability of emission is investigated by means of microphotoluminescence. This allows to determine the maximal operation temperature of the device and reveal the main emission quenching channels. Emission quenching is predominantly caused by the transition of holes and electrons to higher QD’s levels. Additionally, these carriers could further leave the confinement potential via the dense ladder of QD states. Single QD emission is observed up to temperatures of about 100 K, comparable to the best results obtained for epitaxial QDs in this spectral range. The fundamental limit for the emission rate is the excitation radiative lifetime, which spreads from below 0.5 to almost 1.9 ns (GHz operation) without any clear spectral dispersion. Furthermore, carrier dynamics is also determined using time-correlated single-photon counting.
Zitierform
In: Materials Volume 14 / Issue 21 (2021-10-21) eissn:1996-1944Förderhinweis
Gefördert durch den Publikationsfonds der Universität KasselZitieren
@article{doi:10.17170/kobra-202112235347,
author={Smołka, Tristan and Posmyk, Katarzyna and Wasiluk, Maja and Wyborski, Paweł and Gawełczyk, Michał and Mrowiński, Paweł and Mikulicz, Monika and Zielińska, Agata and Reithmaier, Johann Peter and Musiał, Anna and Benyoucef, Mohamed},
title={Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy},
journal={Materials},
year={2021}
}
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2022-01-05T14:17:43Z 2022-01-05T14:17:43Z 2021-10-21 doi:10.17170/kobra-202112235347 http://hdl.handle.net/123456789/13488 Gefördert durch den Publikationsfonds der Universität Kassel eng Namensnennung 4.0 International http://creativecommons.org/licenses/by/4.0/ MBE growth symmetric InAs/InP quantum dots 3rd telecom window internal quantum efficiency carrier dynamics thermal stability of emission time-correlated single-photon counting 600 Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy Aufsatz We present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecular beam epitaxy. This leads to their unique properties, i.e., low spatial density and in-plane shape symmetry. These are advantageous for non-classical light generation for quantum technologies applications. As a measure of the internal quantum efficiency, the discrepancy between calculated and experimentally determined photon extraction efficiency is used. The investigated nanostructures exhibit close to ideal emission efficiency proving their high structural quality. The thermal stability of emission is investigated by means of microphotoluminescence. This allows to determine the maximal operation temperature of the device and reveal the main emission quenching channels. Emission quenching is predominantly caused by the transition of holes and electrons to higher QD’s levels. Additionally, these carriers could further leave the confinement potential via the dense ladder of QD states. Single QD emission is observed up to temperatures of about 100 K, comparable to the best results obtained for epitaxial QDs in this spectral range. The fundamental limit for the emission rate is the excitation radiative lifetime, which spreads from below 0.5 to almost 1.9 ns (GHz operation) without any clear spectral dispersion. Furthermore, carrier dynamics is also determined using time-correlated single-photon counting. open access Smołka, Tristan Posmyk, Katarzyna Wasiluk, Maja Wyborski, Paweł Gawełczyk, Michał Mrowiński, Paweł Mikulicz, Monika Zielińska, Agata Reithmaier, Johann Peter Musiał, Anna Benyoucef, Mohamed doi:10.3390/ma14216270 Quantenpunkt Molekularstrahlepitaxie Telekommunikation Quantenausbeute Carrier Temperaturbeständigkeit publishedVersion eissn:1996-1944 Issue 21 Materials Volume 14 false 6270
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