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Aufsatz
Squeezed thermal phonons precurse nonthermal melting of silicon as a function of fluence
(2013)
A femtosecond-laser pulse can induce ultrafast nonthermal melting of various materials along pathways
that are inaccessible under thermodynamic conditions, but it is not known whether there is any structural
modification at fluences just below the melting threshold. Here, we show for silicon that in this regime the
room-temperature phonons become thermally squeezed, which is a process that has not been reported
before in this material. We find that the origin of this effect is the sudden femtosecond-laser-induc ...
Dissertation
Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates
(2013-07-24)
The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic haracterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon ...