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Dissertation
Optimizing Robust Quantum Gates in Open Quantum Systems
(2015-05-27)
We are currently at the cusp of a revolution in quantum technology that relies not just on the passive use of quantum effects, but on their active control. At the forefront of this revolution is the implementation of a quantum computer. Encoding information in quantum states as “qubits” allows to use entanglement and quantum superposition to perform calculations that are infeasible on classical computers. The fundamental challenge in the realization of quantum computers is to avoid decoherence – the loss of quantum ...
Dissertation
Theory of laser-induced ultrafast structural changes in solids
(2010-04-21)
The present thesis is a contribution to the study of laser-solid interaction.
Despite the numerous applications resulting from the recent use of laser technology, there is still a lack of satisfactory answers to theoretical questions regarding the mechanism leading to the structural changes induced by femtosecond lasers in materials.
We provide here theoretical approaches for the description of the structural response of different solids (cerium, samarium sulfide, bismuth and germanium) to femtosecond laser ...
Dissertation
High-Speed Semiconductor Lasers based on Low-Dimensional Active Materials for Optical Telecommunication
(2012-07-10)
The scope of this work is the fundamental growth, tailoring and characterization of self-organized indium arsenide quantum dots (QDs) and their exploitation as active region for diode lasers emitting in the 1.55 µm range. This wavelength regime is especially interesting for long-haul telecommunications as optical fibers made from silica glass have the lowest optical absorption. Molecular Beam Epitaxy is utilized as fabrication technique for the quantum dots and laser structures. The results presented in this thesis ...
Dissertation
Development of directly modulated high speed telecommunication lasers based on surface defined feedback gratings
(2012-10-31)
High-speed semiconductor lasers are an integral part in the implemen- tation of high-bit-rate optical communications systems. They are com- pact, rugged, reliable, long-lived, and relatively inexpensive sources of coherent light. Due to the very low attenuation window that exists in the silica based optical fiber at 1.55 μm and the zero dispersion point at 1.3 μm, they have become the mainstay of optical fiber com- munication systems. For the fabrication of lasers with gratings such as, distributed bragg reflector ...
Dissertation
Theory of Vesicle Motion and Interpretation of Electrophysiological Experiments in Chromaffin Cells, Hippocampal Neurons and Neuromuscular Junctions
(2018-07-16)
Communication among secretory cells, neurons and other related cells is accompanied by a
process called exocytosis, which consists in the release of neurotransmitters into the intercellular space. The neurotransmitter molecules are transported inside vesicles, which move
towards the cell membrane. Once at an active site of the membrane, vesicles can undergo
fusion with the membrane. As a result of fusion, a pore in the membrane is produced, through
which neurotransmitter molecules leave the cell. Exocytosis is ...
Dissertation
Surface modifications of nanocrystalline diamond films and their functionalization with phthalocyanines
(2016-06-30)
Boron-doped diamond is a promising electrode material for a number of applications providing efficient carrier transport, a high stability of the electrolytic performance with time, a possibility for dye-sensitizing with photosensitive molecules, etc. It can be functionalized with electron donor molecules, like phthalocyanines or porphyrins, for the development of light energy conversion systems. For effective attachment of such molecules, the diamond surface has to be modified by plasma- or photo-chemical processes ...
Dissertation
Fabrication of diamond nanostructures and investigation of the imbedded NV centers
(2015-02-24)
Diamant ist ein Material mit vielen außerordentlichen Eigenschaften, die ihn zu einem äußerst vielversprechenden Kandidaten für Anwendungen in Wissen-schaft und Technik machen. In den letzten Jahren wurde Diamant häufig als einzigartige Plattform für neue Anwendungen beispielsweise in der Quanteninformationstechnologie (QIT) oder in der Magnetometrie im Nanometermaßstab eingesetzt, wobei einer der wichtigsten lumineszierenden Gitterdefekte im Diamantgitter eingesetzt wird. Dabei handelt es sich um die sogenannten ...
Dissertation
1.55 µm High-Speed QDs Lasers for Optical Telecommunication Applications
(2014-12-19)
In this work investigation of the QDs formation and the fabrication of QD based semiconductor lasers for telecom applications are presented. InAs QDs grown on AlGaInAs lattice matched to InP substrates are used to fabricate lasers operating at 1.55 µm, which is the central wavelength for far distance data transmission. This wavelength is used due to its minimum attenuation in standard glass fibers.
The incorporation of QDs in this material system is more complicated in comparison to InAs QDs in the GaAs system. Due ...
Dissertation
Excitation of Phonons in Solids and Nanostructures by Intense Laser and XUV Pulses and by Low Energy Atomic Collision
(2016-02-17)
Intensive, ultrakurze Laserpulse regen Festkörper in einen Zustand an, in dem die Elektronen hohe Temperaturen erlangen, während das Gitter kalt bleibt. Die heißen Elektronen beeinflussen das sog. Laser-angeregte interatomare Potential bzw. die Potentialenergiefläche, auf der die Ionen sich bewegen. Dieses kann neben anderen ultrakurzen Prozessen zu Änderungen der Phononfrequenzen (phonon softening oder phonon hardening) führen. Viele ultrakurze strukturelle Phänomene in Festkörpern hängen bei hohen Laseranregungen ...
Dissertation
Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates
(2013-07-24)
The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic haracterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon ...