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dc.date.accessioned2008-08-12T09:09:10Z
dc.date.available2008-08-12T09:09:10Z
dc.date.issued1992
dc.identifier.issn0178-7683
dc.identifier.issn0722-3277
dc.identifier.uriurn:nbn:de:hebis:34-2008081223210
dc.identifier.urihttp://hdl.handle.net/123456789/2008081223210
dc.format.extent500960 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.rightsUrheberrechtlich geschützt
dc.rights.urihttps://rightsstatements.org/page/InC/1.0/
dc.subject.ddc530
dc.titleInfluence of the interaction potential on simulated sputtering and reflection dataeng
dc.typeAufsatz
dcterms.abstractThe TRIM.SP program which is based on the binary collision approximation was changed to handle not only repulsive interaction potentials, but also potentials with an attractive part. Sputtering yields, average depth and reflection coefficients calculated with four different potentials are compared. Three purely repulsive potentials (Meliere, Kr-C and ZBL) are used and an ab initio pair potential, which is especially calculated for silicon bombardment by silicon. The general trends in the calculated results are similar for all potentials applied, but differences between the repulsive potentials and the ab initio potential occur for the reflection coefficients and the sputtering yield at large angles of incidence.eng
dcterms.accessRightsopen access
dcterms.bibliographicCitationIn: Zeitschrift für Physik / D, Atoms, molecules and clusters. Berlin [u.a.] : Springer, 24.1992, S. 171-176
dcterms.creatorEckstein, Wolfgang
dcterms.creatorHackel, Siegfried
dcterms.creatorHeinemann, Dirk
dcterms.creatorFricke, Burkhard
dc.subject.pacs79.20.eng
dc.subject.pacs34.20.eng


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