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Date
2014
2014
Author
Römer, FriedhardWitzigmann, Bernd
Subject
620  Engineering 
URI
urn:nbn:de:hebis:34-2014103046235

doi:10.1364/OE.22.0A1440
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Aufsatz

Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs

Abstract
We investigate the effect of the epitaxial structure and the acceptor doping profile on the efficiency droop in InGaN/GaN LEDs by the physics based simulation of experimental internal quantum efficiency (IQE) characteristics. The device geometry is an integral part of our simulation approach. We demonstrate that even for single quantum well LEDs the droop depends critically on the acceptor doping profile. The Auger recombination was found to increase stronger than with the third power of the carrier density and has been found to dominate the droop in the roll over zone of the IQE. The fitted Auger coefficients are in the range of the values predicted by atomistic simulations.
Citation
In: Optics express. - Washington, DC : Optical Society of America, 2014, Vol. 22, No. S6, pp. A1440-A1452
Sponsorship
Gefördert durch den Publikationsfonds der Universität Kassel
Collections
Publikationen  (Theorie der Elektrotechnik und Photonik)
Artikel  (Publikationen im Open Access gefördert durch die UB)
Citation
@article{urn:nbn:de:hebis:34-2014103046235,
   author={Römer, Friedhard and Witzigmann, Bernd},
   title={Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs},
   journal={Optics express},
   year={2014}
}
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4000 Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs / Römer, Friedhard
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2014-10-30T13:23:05Z
2014-10-30T13:23:05Z
2014
2014
1094-4087
urn:nbn:de:hebis:34-2014103046235
http://hdl.handle.net/123456789/2014103046235
Gef&ouml;rdert durch den Publikationsfonds der Universit&auml;t Kassel
eng
Optical Society of America
Urheberrechtlich gesch&uuml;tzt
https://rightsstatements.org/page/InC/1.0/
620
Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs
Aufsatz
We investigate the effect of the epitaxial structure and the acceptor doping profile on the efficiency droop in InGaN/GaN LEDs by the physics based simulation of experimental internal quantum efficiency (IQE) characteristics. The device geometry is an integral part of our simulation approach. We demonstrate that even for single quantum well LEDs the droop depends critically on the acceptor doping profile. The Auger recombination was found to increase stronger than with the third power of the carrier density and has been found to dominate the droop in the roll over zone of the IQE. The fitted Auger coefficients are in the range of the values predicted by atomistic simulations.
open access
In: Optics express. - Washington, DC : Optical Society of America, 2014, Vol. 22, No. S6, pp. A1440-A1452
R&ouml;mer, Friedhard
Witzigmann, Bernd
&copy; 2014 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.
Washington, DC
doi:10.1364/OE.22.0A1440
S6
Optics express
S. A1440-A1452
22
</resource>

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Urheberrechtlich geschützt