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dc.date.accessioned2014-10-30T13:23:05Z
dc.date.available2014-10-30T13:23:05Z
dc.date.issued2014
dc.identifier.issn1094-4087
dc.identifier.uriurn:nbn:de:hebis:34-2014103046235
dc.identifier.urihttp://hdl.handle.net/123456789/2014103046235
dc.description.sponsorshipGefördert durch den Publikationsfonds der Universität Kassel
dc.language.isoeng
dc.publisherOptical Society of America
dc.rightsUrheberrechtlich geschützt
dc.rights.urihttps://rightsstatements.org/page/InC/1.0/
dc.subject.ddc620
dc.titleEffect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDseng
dc.typeAufsatz
dcterms.abstractWe investigate the effect of the epitaxial structure and the acceptor doping profile on the efficiency droop in InGaN/GaN LEDs by the physics based simulation of experimental internal quantum efficiency (IQE) characteristics. The device geometry is an integral part of our simulation approach. We demonstrate that even for single quantum well LEDs the droop depends critically on the acceptor doping profile. The Auger recombination was found to increase stronger than with the third power of the carrier density and has been found to dominate the droop in the roll over zone of the IQE. The fitted Auger coefficients are in the range of the values predicted by atomistic simulations.eng
dcterms.accessRightsopen access
dcterms.bibliographicCitationIn: Optics express. - Washington, DC : Optical Society of America, 2014, Vol. 22, No. S6, pp. A1440-A1452
dcterms.creatorRömer, Friedhard
dcterms.creatorWitzigmann, Bernd
dc.description.everything© 2014 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.
dc.publisher.placeWashington, DC
dc.relation.doidoi:10.1364/OE.22.0A1440
dcterms.source.issueS6
dcterms.source.journalOptics express
dcterms.source.pageinfoS. A1440-A1452
dcterms.source.volume22


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