Revealing the origin of magnetoresistance in unipolar amorphous organic field-effect transistors

dc.date.accessioned	2014-12-15T14:03:27Z
dc.date.available	2014-12-15T14:03:27Z
dc.date.issued	2014
dc.identifier.issn	2050-7534
dc.identifier.other	zdb:ZDB-1-RSCK
dc.identifier.uri	urn:nbn:de:hebis:34-2014121546704
dc.identifier.uri	http://hdl.handle.net/123456789/2014121546704
dc.language.iso	eng
dc.rights	Urheberrechtlich geschützt
dc.rights.uri	https://rightsstatements.org/page/InC/1.0/
dc.subject.ddc	530
dc.title	Revealing the origin of magnetoresistance in unipolar amorphous organic field-effect transistors	eng
dc.type	Aufsatz
dcterms.accessRights	open access
dcterms.bibliographicCitation	In: Journal of materials chemistry. C, Materials for optical and electronic devices. - London : RSC, 2014, Vol. 2, 8569-8577
dcterms.creator	Isenberg, Carolin
dcterms.creator	Saragi, Tobat P. I.
dc.relation.doi	doi:10.1039/C4TC00702F