Subject530 Physics 600 Technology QuantenwellÜbergitterPartielle DifferentialgleichungBandstrukturHalbleiterBorn-NäherungMaxwell-Bloch-Gleichungen
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Calculation of optical gain in AlGaN quantum wells for ultraviolet emission
Stimulated emission from AlGaN based quantum wells (QWs) emitting at ultraviolet wavelengths is investigated theoretically. Maxwell–Bloch equations in the second Born approximation are solved self-consistently with the Poisson equation. The valence band dispersion is obtained from a 6-band kp-model. For a QW emitting at around 270 nm with a thickness of 2.2 nm, an estimated FWHM of 10 meV for homogeneous broadening and an excitonic red shift of 100 meV are extracted under typical laser conditions. From a comparison to experimental data of stimulated emission, an inhomogeneous broadening energy of 39 meV FWHM is evaluated. Calculations show that high TE gain can be achieved for thin QWs around 2 nm thickness in a multiple QW arrangement or for single QWs thicker than 6 nm.
CitationIn: AIP Advances Volume 10 / Issue 9 (2020-09-03) , S. 095307 ; EISSN 2158-3226
SponsorshipGefördert durch den Publikationsfonds der Universität Kassel
CollectionsPublikationen (Artikel im Open Access gefördert durch die UB)
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