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Calculation of optical gain in AlGaN quantum wells for ultraviolet emission

dc.date.accessioned2020-10-02T14:26:20Z
dc.date.available2020-10-02T14:26:20Z
dc.date.issued2020-09-03
dc.identifierdoi:10.17170/kobra-202010011870
dc.identifier.urihttp://hdl.handle.net/123456789/11847
dc.description.sponsorshipGefördert durch den Publikationsfonds der Universität Kasselger
dc.language.isoengeng
dc.rightsNamensnennung 4.0 International*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/*
dc.subjectrenormalization and regularizationeng
dc.subjectpartial differential equationseng
dc.subjectsuperlatticeseng
dc.subjectelectronic bandstructureeng
dc.subjectquantum wellseng
dc.subjectsemiconductorseng
dc.subjectBorn approximationeng
dc.subjectlaser theoryeng
dc.subjectMaxwell-Bloch equationseng
dc.subject.ddc530
dc.subject.ddc600
dc.titleCalculation of optical gain in AlGaN quantum wells for ultraviolet emissioneng
dc.typeAufsatz
dcterms.abstractStimulated emission from AlGaN based quantum wells (QWs) emitting at ultraviolet wavelengths is investigated theoretically. Maxwell–Bloch equations in the second Born approximation are solved self-consistently with the Poisson equation. The valence band dispersion is obtained from a 6-band kp-model. For a QW emitting at around 270 nm with a thickness of 2.2 nm, an estimated FWHM of 10 meV for homogeneous broadening and an excitonic red shift of 100 meV are extracted under typical laser conditions. From a comparison to experimental data of stimulated emission, an inhomogeneous broadening energy of 39 meV FWHM is evaluated. Calculations show that high TE gain can be achieved for thin QWs around 2 nm thickness in a multiple QW arrangement or for single QWs thicker than 6 nm.eng
dcterms.accessRightsopen access
dcterms.creatorWitzigmann, Bernd
dcterms.creatorRömer, Friedhard
dcterms.creatorMartens, Martin
dcterms.creatorKuhn, Christian
dcterms.creatorWernicke, Tim
dcterms.creatorKneissl, Michael
dc.relation.doidoi:10.1063/5.0021890
dc.subject.swdQuantenwellger
dc.subject.swdÜbergitterger
dc.subject.swdPartielle Differentialgleichungger
dc.subject.swdBandstrukturger
dc.subject.swdHalbleiterger
dc.subject.swdBorn-Näherungger
dc.subject.swdMaxwell-Bloch-Gleichungenger
dc.type.versionpublishedVersion
dcterms.source.identifierEISSN 2158-3226
dcterms.source.issueIssue 9
dcterms.source.journalAIP Advanceseng
dcterms.source.pageinfo95307
dcterms.source.volumeVolume 10
kup.iskupfalse


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