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Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs
(Optical Society of America, 2014)
We investigate the effect of the epitaxial structure and the acceptor doping profile on the efficiency droop in InGaN/GaN LEDs by the physics based simulation of experimental internal quantum efficiency (IQE) characteristics. The device geometry is an integral part of our simulation approach. We demonstrate that even for single quantum well LEDs the droop depends critically on the acceptor doping profile. The Auger recombination was found to increase stronger than with the third power of the carrier density and has ...
Aufsatz
Gone with the internet - How the old education was lost
(2015-04-08)
Despite its young history, Computer Science Education has seen a number of "revolutions". Being a
veteran in the field, the author reflects on the many changes he has seen in computing and its teaching.
The intent of this personal collection is to point out that most revolutions came unforeseen and that
many of the new learning initiatives, despite high financial input, ultimately failed.
The author then considers the current revolution (MOOC, inverted lectures, peer instruction, game
design) and, based on the ...