Aufsatz
High gain 1.55 μm diode lasers based on InAs quantum dot like active regions
Citation
In: Applied physics letters. - Melville, NY : American Inst. of Physics, 2011, Vol. 98, 201102, 1-3Citation
@article{urn:nbn:de:hebis:34-2013103044333,
author={Gilfert, C. and Ivanov, V. and Oehl, N. and Yacob, M. and Reithmaier, J. P.},
title={High gain 1.55 μm diode lasers based on InAs quantum dot like active regions},
year={2011}
}
0500 Oax 0501 Text $btxt$2rdacontent 0502 Computermedien $bc$2rdacarrier 1100 2011$n2011 1500 1/ 2050 ##0##urn:nbn:de:hebis:34-2013103044333 3000 Gilfert, C. 3010 Ivanov, V. 3010 Oehl, N. 3010 Yacob, M. 3010 Reithmaier, J. P. 4000 High gain 1.55 μm diode lasers based on InAs quantum dot like active regions / Gilfert, C. 4030 4060 Online-Ressource 4085 ##0##=u http://nbn-resolving.de/urn:nbn:de:hebis:34-2013103044333=x R 4204 \$dAufsatz 4170 7136 ##0##urn:nbn:de:hebis:34-2013103044333
2013-10-30T11:42:33Z 2013-10-30T11:42:33Z 2011 1077-3118 zdb:ZDB-1-AIPK urn:nbn:de:hebis:34-2013103044333 http://hdl.handle.net/123456789/2013103044333 Urheberrechtlich geschützt https://rightsstatements.org/page/InC/1.0/ 530 High gain 1.55 μm diode lasers based on InAs quantum dot like active regions Aufsatz open access In: Applied physics letters. - Melville, NY : American Inst. of Physics, 2011, Vol. 98, 201102, 1-3 Gilfert, C. Ivanov, V. Oehl, N. Yacob, M. Reithmaier, J. P. Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich. - This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively. doi:10.1063/1.3590727
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