Aufsatz
Revealing the origin of magnetoresistance in unipolar amorphous organic field-effect transistors
Zitierform
In: Journal of materials chemistry. C, Materials for optical and electronic devices. - London : RSC, 2014, Vol. 2, 8569-8577Zitieren
@article{urn:nbn:de:hebis:34-2014121546704,
author={Isenberg, Carolin and Saragi, Tobat P. I.},
title={Revealing the origin of magnetoresistance in unipolar amorphous organic field-effect transistors},
year={2014}
}
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2014-12-15T14:03:27Z 2014-12-15T14:03:27Z 2014 2050-7534 zdb:ZDB-1-RSCK urn:nbn:de:hebis:34-2014121546704 http://hdl.handle.net/123456789/2014121546704 eng Urheberrechtlich geschützt https://rightsstatements.org/page/InC/1.0/ 530 Revealing the origin of magnetoresistance in unipolar amorphous organic field-effect transistors Aufsatz open access In: Journal of materials chemistry. C, Materials for optical and electronic devices. - London : RSC, 2014, Vol. 2, 8569-8577 Isenberg, Carolin Saragi, Tobat P. I. doi:10.1039/C4TC00702F
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